Electron-beam lithography applications at ETH Zurich

Crystallization of 8mol% yttria-stabilized zirconia thin-films deposited by RF-sputtering

a Laboratory for Development and Methods, Paul Scherrer Institut, 5232 Villigen-PSI, Switzerland b General Energy Research Department, Paul Scherrer Institut, 5232 Villigen-PSI, Switzerland c Massachusetts Institute of Technology (MIT), Department of Materials Science and Engineering and Department of Nuclear Science and Engineering, 77 Massachusetts Ave, Cambridge, MA 02139, USA d Electron Mic...

Adaptive Model-Driven Information Systems Development for Object Databases

Information systems now run on a wide range of target platforms ranging from enterprise servers to mobile devices. The functionality required by the applications running on these platforms varies greatly and for this reason adaptive databases have been proposed that can tailor a data management system to the needs of a particular application and platform. We present an approach to model-driven ...

Cross beam lithography at TASC

Highlights Focused Ion Beam Lithography is a very powerful technique for directly writing patterns on many substrates, it is a mask-less and resist-less technique that allows a very wide range of applications, providing a resolution down to 10 nm. Joined to the Electron Beam Lithography and the Gas Deposition System it became a very versatile tool for many fabrication processes. Using a dual-be...

Noise-induced spectral shift measured in a double quantum dot

B. Küng,1,* S. Gustavsson,1 T. Choi,1 I. Shorubalko,1,2 T. Ihn,1 S. Schön,3 F. Hassler,4 G. Blatter,4 and K. Ensslin1 1Solid State Physics Laboratory, ETH Zurich, 8093 Zurich, Switzerland 2Electronics/Metrology/Reliability Laboratory, EMPA, 8600 Dübendorf, Switzerland 3FIRST Laboratory, ETH Zurich, 8093 Zurich, Switzerland 4Theoretische Physik, ETH Zurich, 8093 Zurich, Switzerland Received 23 A...

Computer Simulation of Processes at Electron and Ion Beam Lithography, Part 2: Simulation of Resist Developed Images at Electron and Ion Beam Lithography